Formation and Characterization of Si-C Alloy in Si Implanted by C Ions

The Chinese Journal of Semiconductors, Ion Implantation, 8 in 8 magistrates, male cedars, and quotations, 1 hand, Jin Yu, Yu Bin, 3, Fu. Lan Ying 1Department of Physics, Beijing Normal University, Beijing 1008752 Institute of Semiconductors, Chinese Academy of Sciences, Beijing 1000833 Institute of Modern Physics, Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China Influence of damage defect injection, ion dose and annealing process on alloy formation was discussed. The formation mechanism of the alloy and the origin of the strain distribution of the alloy. If the dose of 0 ions implanted is smaller than that caused by amorphizing, the damage defects caused by implantation during annealing are liable to combine with atoms to form defect clusters, and it is difficult to form 8; alloys, and the introduction of damage by using 3 ion implantation in advance facilitates the formation of defects. The formation of alloys; but if implanted, ions can cause an amorphization of 8; pre-injection produces flaws that are detrimental to alloy formation. Compared with the slow annealing process, the rapid thermal annealing process facilitates the formation of the alloy. For ion implantation, atoms are not distributed uniformly in the space, and alloy regions with different strains will be formed during annealing.

I. INTRODUCTION In the villages, the alloying of 3 and alloy buckles widens the energy band range of the wall material. The inclusion of ions in the alloy can form 81 alloy similar to 3. 0, the energy band modulation of the alloy pair is mainly in the valence band, 0. The energy band modulation of the pair is mainly in the combination of the two guiding materials of the two melons, so as to provide a 4坫 electronic device with a very small resolution of about 3.51017, 3, and an increase of No 1 alloy middle bond. The research on people paid 81 gold was relatively late. In 1990, 8 et al. 3 for the first time produced a 50 alloy with a 0 content of 3.3 on a three-substrate substrate. Thereafter, whether it was in basic research or practical application, YIHE The research on growth and its performance has received extensive attention in the world. 4 It seems that most of the materials are grown by the method of molecular beam epitaxy. 167. After the ion implantation, the solid phase epitaxy can successfully infiltrate the plant with several orders of magnitude of solubility. He was born in 1967, Ph.D., is engaged in research on condensed matter and physical properties. He is a researcher of semiconductor materials and devices.

Quality is a better method for growing 310. alloys, but for the cysts, the study of 310 alloys injected into 3 is relatively less. In the case of solid-phase epitaxy, the injection region is first amorphized, and is often annealed at a relatively low temperature to eliminate damage defects, and then an alloy formed at high-temperature annealing does not affect the formation of the 31.1 alloy by the pre-injection and annealing process. In-depth study.

In this work, before the ion implantation 3, the sound sample was pre-injected with 3+ ions to cause damage, and then injected simultaneously with the sample without the 3 ion implantation under the same conditions. Cystic, 偻U, 嘶鸸ひ, solid phase epitaxy, The contents of the alloys were as follows: 1. The alloys were removed and the influences of implantation dose and annealing process of pre-injection damage on the solid-phase epitaxy of Alloy 310 were studied.

2 Experimental methods Samples were selected, type single crystal crucibles, and some samples were pre-injected into 260 to cause damage. Then under the same conditions, uninjected crucibles were simultaneously implanted with ions to eliminate the channel 2001 China Electronics Association effect, the beam was 10 Angle of incidence; To prevent heating of the sample by the beam, water is used to cool the sample holder during injection. Inject ion annealing and two-step slow-annealing technique. The two annealing feet are 45, 1, 3 fire 3, 1 oil 1 gate, and then anneal at 750 along the fire 3 before and after annealing with twin crystals, ray diffraction, 020 scan patterns with the male ray ray diffractometry with a =106 ray tracing pattern and The backscattered configuration of the doped spectrum analyzed the recovery of defects in the sample and the growth characteristics of the 34 alloy.

Sample dose rate 0 Dose rate 3 Experimental results and the depth distribution of the damage generated during the injection. Damages in the pre-injection + ion sample were 1.53 times that of the non-pre-injected sample; on the other night, the damages of the 38 and 2 samples were found in 1, CSL, and thumb. Tends to cause.

The depth distribution of the wound after the sample's 004 twin crystal, ray diffraction spectrum. Before annealing, 3 and 38 samples appeared in the matrix diffraction peak, the small angle of the strong peak at the angle position appeared the oscillation peak located on the diffracting call side of 004, and the 38 sample appeared at 950, after annealing, appeared at the high angle position of the diffraction peak of the matrix. Significant diffraction peaks of the lattice contraction; in the two samples at 95, after annealing, the double-crystal, ray diffraction spectrum did not appear in the ray diffraction peaks formed on the two sides of the proof diffraction peak after annealing of the three samples. A series of obvious oscillation peaks appeared at the high diffraction angles of the matrix diffraction; some oscillation peaks appeared after annealing in the sample 28, but the oscillation peaks were not obvious at the high angle position, and the diffraction peaks and the matrix of the high-angle position of the other 28 samples were also observed. The maximum angular distance between the diffraction peaks is smaller than in the 2 samples.

Diffraction spectra 4 Results Discussion 4.1 Effect of implantation damage on alloy formation The atomic condensation behavior of the 3 and 38 samples of 2 and 28 samples during the annealing process is different. These differences are necessarily due to the damage caused by the pre-injected 31+ ions which affect the annealing process. The Zhonghe and Xiong atoms produce a large number of vacancies and interstitial atoms, while the injected ion loss energy stays in the matrix. Ion-implanted at room temperature in the interstitial site, the dissociated interstitial atoms and the implanted ions cause the lattice of the matrix to expand. In the low-angle position of the matrix diffraction peak, there will be 2 covalent radii smaller than that of the siblings, during the high-temperature annealing process, If the atom enters the 3 lattice position to form a 3. alloy, its lattice constant will shrink. In the matrix, the diffraction peak corresponding to the lattice contraction appears at the high-angle position of the ray diffraction peak, and the angular distance between the peak and the diffraction peak of the matrix. With 3, the strain stress produced by the alloy is directly proportional to the alloy, yttrium, chopped and burned, and the dog apparently 3 people sample 95 and after annealing, the damage introduced by the ion implantation is not completely eliminated, and the backfire process is not formed. 1 alloy and buckle the sample after annealing in 95,1. Most of the 0 atoms enter the 3 lattice site ç•€, forming a 1. 1, alloy. A dose of 100 in ion implantation 3 damages the distortion region rather than damages the superposed amorphous region. In 950, during the annealing process, these lattices recover from lattice damage, atoms are easily combined with damage defects to form defect clusters, and distortions dominated by lattice expansion still appear after annealing; while 38 samples are injected at 0 atoms. Before the introduction of damage in the injection zone, it can be seen from the 1 that the total damage after ion implantation is about 2 times, which is close to the damage needed for the amorphization of the cyanobacterial (4) æ°¤1, in 38 samples. Amorphous regions will be formed. In 950, during the annealing process, the crystals are first called by the interface of the crystal twins. During the crystallization process, the crystallization of the crystals occurs.

From 1 it can be seen that the damage and distribution in the 2 samples are similar to those in the 33 samples except that they are injected, and the concentration of atoms is different. Therefore, in the 2 samples, the cysts (4), the weft, the envy, the surface Similar to the solid-phase epitaxy of 38 samples, the atomic boundary is easily formed in the 95 and annealing process. 23 The damage of the sample was larger than that of the 2 sample, and 2 compared with the 2. sample; the distortion of the alloy in the sample was slightly smaller than that of the 2 sample. This damage is too strong. The reinstatement of character damage is not easy to recover.

If the original alloy enters into the deuterium-substitution formation, the alloy, in the position of the 605, 1 frequency shift, holds the 1 spectrum; now the alloy's 3 region vibrates. To determine whether or not an alloy was formed during the annealing process, the alloy was analyzed on the 950, under-annealed sample. Spectral analysis was carried out. As a result, 4,34 specimens were observed at 95. After annealing, almost no 3-mode vibration mode was observed, while 38 specimens were observed. At 950, 5 vibration modes were observed after annealing; 2 people 28 samples after 3 and 8 spectra were approximately the injection dose of Sangyang samples. The small-amorphous agent injection will form some of the shirts embedded in 31 Alloys 2 and 2 form an alloy in the crucible, while 3 alloys hardly form an alloy; in addition, as the content increases, the strength of the vibrating pattern increases.

4.2 Formation of Oscillating Peaks and Effects of Annealing Process Due to the non-uniform distortion in the ion incidence path during injection, different layered distortion regions will be formed along the direction perpendicular to the incident crystal planes. As discussed earlier, the injection dose for the three-member sample is less than the implantation amorphization dose. The implant is partially amorphized, and the implantation will form some damage distortion domains embedded in the three-substrate. These damaged regions will recover distortion during annealing. For different 1 domains, the lattice constants corresponding to different degrees of distortion are not 14. The diffraction peaks in the dual product diffraction spectrum will appear with a diffraction angle that is not 14 angular.

Observed bright peaks, and the angular distance between the peaks of the same one. To investigate the cause of this phenomenon, as described by the step ray ray 020, the bright oscillation peak is not due to the difference in the crystal orientation of the epitaxial layer during solid-phase epitaxial growth. Comparing the diffraction of 2 and 28 samples, the angular distance of diffraction between the two samples is relatively small at a small angular distance, ie, the strain is relatively small. The saturation solid solubility of ion implantation in 3 is about 71妒391. According to the calculation of the maximum angular distance of two samples, 淖罡, the incorporation concentration is about 5. Larger than its saturated solid solubility, it also shows that in 31 can enter the large equilibrium solubility of several orders of magnitude. Since the maximum incorporation does not exceed its saturated solid solubility, the formation of regions is less likely. 2, although the sample uses two kinds of energy ion implantation, the distribution from the 7 is still uneven sentence. Solid phase epitaxy. The incorporation of interfacial stress and interfacial stress, 涸, 涞, 涞 涞 涞 涞 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Distortion distribution, distortion distribution will form the modulation area with unequal spacing between crystal planes, and a series of peaks appear on the parent ray diffraction spectrum. For the 28 samples, in which the damage is severe, the strain of the interface during solid-phase epitaxy will be limited to the incorporation of different samples of 2 humans, which may be the reason why the angular distance of the 30 alloy in 28 samples is smaller than that of the 2 samples.

In the solid-phase epitaxial growth process, the formation of rapid annealing alloys was observed and the probability of defect formation was reduced to investigate the effect of the annealing process on the formation of alloys. Two-step annealing was performed on 28 samples, annealing at 450 for 30 times. The body twin crystal interface is smooth, then at 750, annealing 30 to form 3 alloy. The ray diffraction pattern of the 28 samples of the two-step annealing was also given in 5.

Comparing with the spectra of anneal 3,8 of 950, the maximum distance between the peaks of the 3 alloys formed by annealing at 75°C and the annealing of 3 with 95 buckles is equal, that is, the maximum strain is caused by the maximum strain, but the diffraction of the alloy. As the intensity decreases, the oscillation peak at the high angular distance almost disappears, and a relatively wide smooth peak appears. This defect formed by the two annealing steps broadens the diffraction peak of the alloy. This is due to the slow return of the low-temperature 450 during the process, the dislocation of the original 1 to restore the lattice position, occupying the vacancy introduced into the injection, so that the high temperature annealing process, the original 1 into the taste of the stomach decreased the chance, Defects are formed. The presence of defects may affect the distribution of distortion. The modulation of the interplanar spacing in the distortion zone is limited, and the small peaks disappear.

5 Conclusions Infusions of 3, 1 micron, 1 tonne, high temperature annealing can form. alloy. When the implanted ion dose is less than the dose caused by 3 non-productive, the damage caused by the injection during annealing is prone to combine with atoms to form defect clusters, which is not conducive to the formation of 0 alloys, and 81 injections are used in advance to introduce the damages. For the formation of 0 alloys, if they are implanted, the ions alone can cause amorphization. The damage caused by the pre-injection is not conducive to the formation of 3,0 alloys. The rapid thermal annealing process facilitates the formation of 4 alloys. In the injection, the uneven distribution of ions in the space will form 4 alloy regions with different strains.

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