The latest technology in graphene purification helps nanoelectronics

Abstract According to the Russian satellite network reported on October 19, Russia, France, Sweden and Greece scientists collaborate to develop an industrial technology to purify graphene, new ways to make graphene more stable, the latest findings contribute to a better purification of graphene To obtain stable electrical properties...
According to a report by the Russian satellite network on October 19th, Russian, French, Swedish and Greek scientists have jointly developed an industrial technology to purify graphene. The new method makes graphene more stable, and the latest discovery helps to better purify graphene. This results in high quality industrial graphene with stable electrical properties.
Even if it is exposed to ozone for 10 minutes, it will be “unharmed”. The researchers said that the achievement is an important advancement in the field of nanoelectronics technology and will greatly promote the development of this field.
Graphene is a material that is one million times thinner than hair. It consists of a single layer of carbon atoms arranged in a honeycomb structure. It has high conductivity, durability and ductility, and can be used to manufacture a variety of nanoelectronic devices. . During the production process, the polymer coating residue "contaminates" the graphene and reduces the fluidity of its internal charge carriers. Thermal annealing, plasma degumming, and chemical solvents remove polymer residues, but at the same time weaken the purity of graphene. Among them, one of the most commonly used purification methods is the use of ozone. Although this method is highly reactive, ozone destroys the polymer residue and causes defects in the graphene, resulting in weakening of its performance.
In view of this, scientists at the Moscow Institute of Engineering Physics (MEPhI) of the Russian National Institute of Nuclear Energy Research have successfully obtained high-strength graphene using high-temperature silicon carbide (SiC) sublimation, which has been exposed to ozone for more than 10 minutes. It is unchanged; ordinary graphene is impaired in performance for three to four minutes in the same environment.
In order to further verify the test results, scientists in Greece, France and Sweden have used computer modeling to clarify why silicon carbide-graphene is still “unharmed” under the action of violent oxygen free radicals and is more stable: new graphene The extraordinary stability is clearly related to the lower roughness of the epitaxial graphene on the silicon carbide susceptor.

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